? 0.fifteen) is epitaxially developed on the SOI substrate. A thinner layer of Si is developed on this SiGe layer, and then the framework is cycled as a result of oxidizing and annealing stages. As a result of preferential oxidation of Si more than Ge [68], the original Si1–Nghiên c?u c?a FDA ??a ra k?t lu?n r?ng germani, khi s? ??ng nh? là ch?